All MOSFET. RXR035N03 Datasheet

 

RXR035N03 Datasheet and Replacement


   Type Designator: RXR035N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TSMT3
 

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RXR035N03 Datasheet (PDF)

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RXR035N03

Data Sheet4V Drive Nch MOSFET RXR035N03 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETTSMT3Features(3)1) Low on-resistance.2) Built-in G-S Protection Diode.(1) (2)3) Small Surface Mount Package (TSMT3).Abbreviated symbol : XQ ApplicationSwitching Packaging specifications Inner circuitPackage Taping(3)TypeCode TCLBasic orderin

Datasheet: RW1E014SN , RW1E015RP , RW1E025RP , RXH070N03 , RXH090N03 , RXH100N03 , RXH125N03 , RXQ040N03 , IRFP460 , RYC002N05 , RYE002N05 , RYM002N05 , RYU002N05 , RZE002P02 , RZF013P01 , RZF020P01 , RZF030P01 .

History: APT3580BN | RSR030N06

Keywords - RXR035N03 MOSFET datasheet

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