RXR035N03 PDF and Equivalents Search

 

RXR035N03 Specs and Replacement

Type Designator: RXR035N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V

Qg ⓘ - Total Gate Charge: 3.3 nC

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: TSMT3

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RXR035N03 datasheet

 ..1. Size:1213K  rohm
 rxr035n03.pdf pdf_icon

RXR035N03

Data Sheet 4V Drive Nch MOSFET RXR035N03 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT3 Features (3) 1) Low on-resistance. 2) Built-in G-S Protection Diode. (1) (2) 3) Small Surface Mount Package (TSMT3). Abbreviated symbol XQ Application Switching Packaging specifications Inner circuit Package Taping (3) Type Code TCL Basic orderin... See More ⇒

Detailed specifications: RW1E014SN, RW1E015RP, RW1E025RP, RXH070N03, RXH090N03, RXH100N03, RXH125N03, RXQ040N03, IRF640, RYC002N05, RYE002N05, RYM002N05, RYU002N05, RZE002P02, RZF013P01, RZF020P01, RZF030P01

Keywords - RXR035N03 MOSFET specs

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