RYC002N05 Specs and Replacement
Type Designator: RYC002N05
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 0.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 6 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
Package: SST3 SOT23
RYC002N05 substitution
- MOSFET ⓘ Cross-Reference Search
RYC002N05 datasheet
ryc002n05.pdf
Data Sheet 0.9V Drive Nch MOSFET RYC002N05 Structure Dimensions (Unit mm) SST3 Silicon N-channel MOSFET Features 1) High speed switing. 2) Small package(SST3). 3)Ultra low voltage drive(0.9V drive). Abbreviated symbol QJ Application Switching Packaging specifications Inner circuit (3) Package Taping Type Code T316 Basic ordering unit (piece... See More ⇒
ryc002n05.pdf
Product specification RYC002N05 0.9V Drive Nch MOSFET Structure Dimensions (Unit mm) SST3 Silicon N-channel MOSFET Features 1) High speed switing. 2) Small package(SST3). 3)Ultra low voltage drive(0.9V drive). Abbreviated symbol QJ Application Switching Packaging specifications Inner circuit (3) Package Taping Type Code T316 Basic ordering ... See More ⇒
Detailed specifications: RW1E015RP, RW1E025RP, RXH070N03, RXH090N03, RXH100N03, RXH125N03, RXQ040N03, RXR035N03, IRF1404, RYE002N05, RYM002N05, RYU002N05, RZE002P02, RZF013P01, RZF020P01, RZF030P01, RZM002P02
Keywords - RYC002N05 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: MEE42942-G | MEE4294HT
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