All MOSFET. RYC002N05 Datasheet

 

RYC002N05 Datasheet and Replacement


   Type Designator: RYC002N05
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 0.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 6 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: SST3 SOT23
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RYC002N05 Datasheet (PDF)

 ..1. Size:1157K  rohm
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RYC002N05

Data Sheet0.9V Drive Nch MOSFETRYC002N05 Structure Dimensions (Unit : mm)SST3Silicon N-channel MOSFETFeatures1) High speed switing.2) Small package(SST3).3)Ultra low voltage drive(0.9V drive).Abbreviated symbol : QJ ApplicationSwitching Packaging specifications Inner circuit(3)Package TapingTypeCode T316Basic ordering unit (piece

 ..2. Size:434K  tysemi
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RYC002N05

Product specificationRYC002N050.9V Drive Nch MOSFET Structure Dimensions (Unit : mm)SST3Silicon N-channel MOSFETFeatures1) High speed switing.2) Small package(SST3).3)Ultra low voltage drive(0.9V drive).Abbreviated symbol : QJ ApplicationSwitching Packaging specifications Inner circuit(3)Package TapingTypeCode T316Basic ordering

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: IRF7495PBF | SVGP20110NSTR | 2SK2895-01 | MXP4004AT | 15N10B | AO3415W | MEE42942-G

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