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RYE002N05 Specs and Replacement

Type Designator: RYE002N05

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 0.8 V

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 6 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm

Package: EMT3 SC75A SOT416

RYE002N05 substitution

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RYE002N05 datasheet

 ..1. Size:303K  rohm
 rye002n05.pdf pdf_icon

RYE002N05

0.9V Drive Nch MOSFET RYE002N05 Structure Dimensions (Unit mm) Silicon N-channel MOSFET EMT3 (SC-75A) Features 1) High speed switing. 2) Small package(EMT3). 3) Ultra low voltage drive(0.9V drive). Abbreviated symbol QJ Application Switching Packaging specifications Inner circuit (3) Package Taping Type Code TCL Basic ordering unit (pieces) 3000 RYE002N0... See More ⇒

Detailed specifications: RW1E025RP, RXH070N03, RXH090N03, RXH100N03, RXH125N03, RXQ040N03, RXR035N03, RYC002N05, IRLZ44N, RYM002N05, RYU002N05, RZE002P02, RZF013P01, RZF020P01, RZF030P01, RZM002P02, RZQ050P01

Keywords - RYE002N05 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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