All MOSFET. RYE002N05 Datasheet

 

RYE002N05 Datasheet and Replacement


   Type Designator: RYE002N05
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 6 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: EMT3 SC75A SOT416
 

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RYE002N05 Datasheet (PDF)

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RYE002N05

0.9V Drive Nch MOSFET RYE002N05 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETEMT3(SC-75A) Features1) High speed switing.2) Small package(EMT3).3) Ultra low voltage drive(0.9V drive).Abbreviated symbol : QJ ApplicationSwitching Packaging specifications Inner circuit(3)Package TapingTypeCode TCLBasic ordering unit (pieces) 3000RYE002N0

Datasheet: RW1E025RP , RXH070N03 , RXH090N03 , RXH100N03 , RXH125N03 , RXQ040N03 , RXR035N03 , RYC002N05 , IRFP260N , RYM002N05 , RYU002N05 , RZE002P02 , RZF013P01 , RZF020P01 , RZF030P01 , RZM002P02 , RZQ050P01 .

History: IXFX32N80P | TPCA8060-H | BSS215P | TPCA8102 | STW265N6F6AG | FTK138D | IXTH41N25

Keywords - RYE002N05 MOSFET datasheet

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