RYM002N05 PDF and Equivalents Search

 

RYM002N05 Specs and Replacement

Type Designator: RYM002N05

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 6 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm

Package: VMT3

RYM002N05 substitution

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RYM002N05 datasheet

 ..1. Size:316K  rohm
 rym002n05.pdf pdf_icon

RYM002N05

0.9V Drive Nch MOSFET RYM002N05 Structure Dimensions (Unit mm) Silicon N-channel MOSFET VMT3 Features 1) High speed switing. 2) Small package(VMT3). 3) Ultra low voltage drive(0.9V drive). Abbreviated symbol QJ Application Switching Packaging specifications Inner circuit (3) Package Taping Type Code T2L Basic ordering unit (pieces) 8000 RYM002N05 ... See More ⇒

Detailed specifications: RXH070N03, RXH090N03, RXH100N03, RXH125N03, RXQ040N03, RXR035N03, RYC002N05, RYE002N05, IRFB4110, RYU002N05, RZE002P02, RZF013P01, RZF020P01, RZF030P01, RZM002P02, RZQ050P01, RZR020P01

Keywords - RYM002N05 MOSFET specs

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