All MOSFET. RYM002N05 Datasheet

 

RYM002N05 Datasheet and Replacement


   Type Designator: RYM002N05
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 6 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: VMT3
 

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RYM002N05 Datasheet (PDF)

 ..1. Size:316K  rohm
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RYM002N05

0.9V Drive Nch MOSFETRYM002N05 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETVMT3Features1) High speed switing.2) Small package(VMT3).3) Ultra low voltage drive(0.9V drive).Abbreviated symbol : QJ ApplicationSwitching Packaging specifications Inner circuit(3)Package TapingTypeCode T2LBasic ordering unit (pieces) 8000RYM002N05

Datasheet: RXH070N03 , RXH090N03 , RXH100N03 , RXH125N03 , RXQ040N03 , RXR035N03 , RYC002N05 , RYE002N05 , IRF640N , RYU002N05 , RZE002P02 , RZF013P01 , RZF020P01 , RZF030P01 , RZM002P02 , RZQ050P01 , RZR020P01 .

History: ME7642-G | OSG60R580DTF | 75N75G-TQ2-R | ISL9N310AD3ST | NTJD5121NT1G | HM8N20K | SI1442DH

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