RYU002N05 PDF and Equivalents Search

 

RYU002N05 Specs and Replacement

Type Designator: RYU002N05

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 6 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm

Package: UMT3 SC70 SOT323

RYU002N05 substitution

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RYU002N05 datasheet

 ..1. Size:963K  rohm
 ryu002n05.pdf pdf_icon

RYU002N05

Data Sheet 0.9V Drive Nch MOSFET RYU002N05 Structure Dimensions (Unit mm) Silicon N-channel MOSFET Features 1) High speed switing. (2) (1) 2) Small package(UMT3). 3)Ultra low voltage drive(0.9V drive). Abbreviated symbol QJ Application Switching Packaging specifications Inner circuit (3) Package Taping Type Code T306 Basic ordering unit (pieces) 300... See More ⇒

 0.1. Size:844K  cn vbsemi
 ryu002n05t306.pdf pdf_icon

RYU002N05

RYU002N05T306 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 2 at VGS = 10 V 60 300 Low On-Resistance 2 Low Threshold 2 V (typ.) Low Input Capacitance 25 pF Fast Switching Speed 25 ns SOT-323 Low Input and Output Leakage SC-70 (3-LEADS) TrenchF... See More ⇒

Detailed specifications: RXH090N03, RXH100N03, RXH125N03, RXQ040N03, RXR035N03, RYC002N05, RYE002N05, RYM002N05, IRF640N, RZE002P02, RZF013P01, RZF020P01, RZF030P01, RZM002P02, RZQ050P01, RZR020P01, RZR025P01

Keywords - RYU002N05 MOSFET specs

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