All MOSFET. RYU002N05 Datasheet

 

RYU002N05 Datasheet and Replacement


   Type Designator: RYU002N05
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 6 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: UMT3 SC70 SOT323
 

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RYU002N05 Datasheet (PDF)

 ..1. Size:963K  rohm
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RYU002N05

Data Sheet0.9V Drive Nch MOSFETRYU002N05 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETFeatures1) High speed switing.(2) (1)2) Small package(UMT3).3)Ultra low voltage drive(0.9V drive).Abbreviated symbol : QJ ApplicationSwitching Packaging specifications Inner circuit(3)Package TapingTypeCode T306Basic ordering unit (pieces) 300

 0.1. Size:844K  cn vbsemi
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RYU002N05

RYU002N05T306www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2 at VGS = 10 V60 300 Low On-Resistance: 2 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 nsSOT-323 Low Input and Output LeakageSC-70 (3-LEADS) TrenchF

Datasheet: RXH090N03 , RXH100N03 , RXH125N03 , RXQ040N03 , RXR035N03 , RYC002N05 , RYE002N05 , RYM002N05 , IRF630 , RZE002P02 , RZF013P01 , RZF020P01 , RZF030P01 , RZM002P02 , RZQ050P01 , RZR020P01 , RZR025P01 .

History: SI1400DL | IXTT140N10P | SSF2341E | STD35NF3LLT4 | QH8MA4 | AFN4946 | BRCS20P06IP

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