RZE002P02 MOSFET. Datasheet pdf. Equivalent
Type Designator: RZE002P02
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 10 V
|Id|ⓘ - Maximum Drain Current: 0.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 1.4 nC
trⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 10 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: EMT3
RZE002P02 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RZE002P02 Datasheet (PDF)
Datasheet: RXH100N03 , RXH125N03 , RXQ040N03 , RXR035N03 , RYC002N05 , RYE002N05 , RYM002N05 , RYU002N05 , IRF3710 , RZF013P01 , RZF020P01 , RZF030P01 , RZM002P02 , RZQ050P01 , RZR020P01 , RZR025P01 , RZR040P01 .
