All MOSFET. RZF013P01 Datasheet

 

RZF013P01 Datasheet and Replacement


   Type Designator: RZF013P01
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 1.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 28 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TUMT3
 

 RZF013P01 substitution

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RZF013P01 Datasheet (PDF)

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RZF013P01

1.5V Drive Pch MOSFET RZF013P01 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TUMT3 Features 1) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V) (1) Gate(2) SourceAbbreviated symbol : XC(3) Drain Applications Equivalent circuit Switching (3) Packaging specifications 2(1)Package TapingType Code TL1Basic orderi

Datasheet: RXH125N03 , RXQ040N03 , RXR035N03 , RYC002N05 , RYE002N05 , RYM002N05 , RYU002N05 , RZE002P02 , AO3400 , RZF020P01 , RZF030P01 , RZM002P02 , RZQ050P01 , RZR020P01 , RZR025P01 , RZR040P01 , ZDS020N60 .

History: SWF15N65D | SM7320ESQG

Keywords - RZF013P01 MOSFET datasheet

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