RZF013P01 PDF and Equivalents Search

 

RZF013P01 Specs and Replacement

Type Designator: RZF013P01

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 1.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 28 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: TUMT3

RZF013P01 substitution

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RZF013P01 datasheet

 ..1. Size:215K  rohm
 rzf013p01.pdf pdf_icon

RZF013P01

1.5V Drive Pch MOSFET RZF013P01 Structure Dimensions (Unit mm) Silicon P-channel MOSFET TUMT3 Features 1) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V) (1) Gate (2) Source Abbreviated symbol XC (3) Drain Applications Equivalent circuit Switching (3) Packaging specifications 2 (1) Package Taping Type Code TL 1 Basic orderi... See More ⇒

Detailed specifications: RXH125N03, RXQ040N03, RXR035N03, RYC002N05, RYE002N05, RYM002N05, RYU002N05, RZE002P02, AO3400, RZF020P01, RZF030P01, RZM002P02, RZQ050P01, RZR020P01, RZR025P01, RZR040P01, ZDS020N60

Keywords - RZF013P01 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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