RZF030P01 Datasheet and Replacement
Type Designator: RZF030P01
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 210 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
Package: TUMT3
RZF030P01 substitution
RZF030P01 Datasheet (PDF)
rzf030p01.pdf
1.5V Drive Pch MOSFET RZF030P01 Dimensions (Unit : mm) Structure Silicon P-channel TUMT3MOSFET Features 1) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V) (1) Gate(2) SourceAbbreviated symbol : YD(3) Drain Applications Switching Packaging specifications Equivalent circuit Package Taping(3)Type Code TLBasic ordering unit (piec
Datasheet: RXR035N03 , RYC002N05 , RYE002N05 , RYM002N05 , RYU002N05 , RZE002P02 , RZF013P01 , RZF020P01 , IRF3710 , RZM002P02 , RZQ050P01 , RZR020P01 , RZR025P01 , RZR040P01 , ZDS020N60 , ZDX130N50 , KP214A9 .
History: RUH3025M3
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: RUH3025M3
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