RZF030P01 PDF and Equivalents Search

 

RZF030P01 Specs and Replacement

Type Designator: RZF030P01

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm

Package: TUMT3

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RZF030P01 datasheet

 ..1. Size:247K  rohm
 rzf030p01.pdf pdf_icon

RZF030P01

1.5V Drive Pch MOSFET RZF030P01 Dimensions (Unit mm) Structure Silicon P-channel TUMT3 MOSFET Features 1) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V) (1) Gate (2) Source Abbreviated symbol YD (3) Drain Applications Switching Packaging specifications Equivalent circuit Package Taping (3) Type Code TL Basic ordering unit (piec... See More ⇒

Detailed specifications: RXR035N03, RYC002N05, RYE002N05, RYM002N05, RYU002N05, RZE002P02, RZF013P01, RZF020P01, IRF3710, RZM002P02, RZQ050P01, RZR020P01, RZR025P01, RZR040P01, ZDS020N60, ZDX130N50, KP214A9

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