All MOSFET. RZF030P01 Datasheet

 

RZF030P01 Datasheet and Replacement


   Type Designator: RZF030P01
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
   Package: TUMT3
 

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RZF030P01 Datasheet (PDF)

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RZF030P01

1.5V Drive Pch MOSFET RZF030P01 Dimensions (Unit : mm) Structure Silicon P-channel TUMT3MOSFET Features 1) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V) (1) Gate(2) SourceAbbreviated symbol : YD(3) Drain Applications Switching Packaging specifications Equivalent circuit Package Taping(3)Type Code TLBasic ordering unit (piec

Datasheet: RXR035N03 , RYC002N05 , RYE002N05 , RYM002N05 , RYU002N05 , RZE002P02 , RZF013P01 , RZF020P01 , P55NF06 , RZM002P02 , RZQ050P01 , RZR020P01 , RZR025P01 , RZR040P01 , ZDS020N60 , ZDX130N50 , KP214A9 .

History: AFN1443 | HTD035N03 | SPA06N80C3 | TPCA8027-H | VBL1806 | SSF2610E | NTLUS3A18PZTAG

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