RZM002P02 PDF and Equivalents Search

 

RZM002P02 Specs and Replacement

Type Designator: RZM002P02

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 0.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 10 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: VMT3

RZM002P02 substitution

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RZM002P02 datasheet

 ..1. Size:218K  rohm
 rzm002p02.pdf pdf_icon

RZM002P02

1.2V Drive Pch MOSFET RZM002P02 Structure Dimensions (Unit mm) Silicon P-channel MOSFET VMT3 1.2 0.32 Features (3) 1) High Speed Switching. 2) Small package (VMT3). (1)(2) 0.22 0.13 3) Ultra Low Voltage drive. (1.2V drive) 0.4 0.4 0.5 0.8 (1)Gate (2)Source (3)Drain Abbreviated symbol YK Applications Inner circuit Switching (3) Packaging specifications ... See More ⇒

 0.1. Size:1872K  cn tech public
 przm002p02t2l.pdf pdf_icon

RZM002P02

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 9.1. Size:397K  rohm
 rzm001p02.pdf pdf_icon

RZM002P02

RZM001P02 Pch -20V -100mA Small Signal MOSFET Datasheet lOutline VDSS -20V (3) VMT3 RDS(on) (Max.) 3.8W (1) ID -100mA (2) PD 150mW lFeatures lInner circuit 1) Low voltage drive(1.2V) makes this (1) Gate device ideal for partable equipment. (2) Source 2) Drive circuits can be simple. (3) Drain 3) Built-in G-S Protection Diode. *1 BODY DIODE *2 ESD PROTECTION DIOD... See More ⇒

Detailed specifications: RYC002N05, RYE002N05, RYM002N05, RYU002N05, RZE002P02, RZF013P01, RZF020P01, RZF030P01, 10N60, RZQ050P01, RZR020P01, RZR025P01, RZR040P01, ZDS020N60, ZDX130N50, KP214A9, KP501A

Keywords - RZM002P02 MOSFET specs

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