All MOSFET. RZQ050P01 Datasheet

 

RZQ050P01 Datasheet and Replacement


   Type Designator: RZQ050P01
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
   Package: TSMT6
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RZQ050P01 Datasheet (PDF)

 ..1. Size:211K  rohm
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RZQ050P01

1.5V Drive Pch MOSFET RZQ050P01 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low on-resistance. 2) High power package. 0~0.1(1) (2) (3)3) Low voltage drive. (1.5V) 1pin mark0.160.4Each lead has same dimensionsAbbreviated symbol : YF Applications Switching Packaging specificati

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: STD4NA40-1 | IXTH11N80 | HM6N70I | GSM4936S | FCA47N60F109 | KF7N50D | ATM2N65TE

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