RZQ050P01 PDF and Equivalents Search

 

RZQ050P01 Specs and Replacement

Type Designator: RZQ050P01

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm

Package: TSMT6

RZQ050P01 substitution

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RZQ050P01 datasheet

 ..1. Size:211K  rohm
 rzq050p01.pdf pdf_icon

RZQ050P01

1.5V Drive Pch MOSFET RZQ050P01 Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 0.85 1.9 Features 0.95 0.95 0.7 (6) (5) (4) 1) Low on-resistance. 2) High power package. 0 0.1 (1) (2) (3) 3) Low voltage drive. (1.5V) 1pin mark 0.16 0.4 Each lead has same dimensions Abbreviated symbol YF Applications Switching Packaging specificati... See More ⇒

Detailed specifications: RYE002N05, RYM002N05, RYU002N05, RZE002P02, RZF013P01, RZF020P01, RZF030P01, RZM002P02, AON6414A, RZR020P01, RZR025P01, RZR040P01, ZDS020N60, ZDX130N50, KP214A9, KP501A, KP501B

Keywords - RZQ050P01 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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