RZR025P01 Specs and Replacement
Type Designator: RZR025P01
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 2.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 130 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.061 Ohm
Package: TSMT3
RZR025P01 substitution
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RZR025P01 datasheet
rzr025p01.pdf
RZR025P01 Transistors 1.5V Drive Pch MOSFET RZR025P01 Dimensions (Unit mm) Features 1) Low On-resistance. TSMT3 1.0MAX 2) Built-in G-S Protection Diode. 2.9 0.85 3) Small and Surface Mount Package (TSMT3). 0.4 0.7 4) Low voltage drive (1.5V). (3) ( ) ( ) 1 2 0.95 0.95 Application 0.16 1.9 Switching (1) Gate Each lead has same dimensions (2) Source Abbrevi... See More ⇒
rzr020p01.pdf
1.5V Drive Pch MOSFET RZR020P01 Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 (3) Features 1) Low on-resistance. (1) (2) 2) Built-in G-S Protection Diode. 0.95 0.95 0.16 1.9 3) Small and Surface Mount Package (TSMT3). (1) Gate Each lead has same dimensions 4) Low voltage drive (1.5V). (2) Source Abbreviated symbol ZE ... See More ⇒
Detailed specifications: RYU002N05, RZE002P02, RZF013P01, RZF020P01, RZF030P01, RZM002P02, RZQ050P01, RZR020P01, 2N7000, RZR040P01, ZDS020N60, ZDX130N50, KP214A9, KP501A, KP501B, KP501V, KP502A
Keywords - RZR025P01 MOSFET specs
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