RZR040P01 Specs and Replacement
Type Designator: RZR040P01
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 310 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: TSMT3
RZR040P01 substitution
- MOSFET ⓘ Cross-Reference Search
RZR040P01 datasheet
rzr040p01.pdf
1.5V Drive Pch MOSFET RZR040P01 Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 Features ( ) 3 1) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V) ( ) ( ) 1 2 0.95 0.95 0.16 1.9 Applications (1) Gate Each lead has same dimensions Switching (2) Source Abbreviated symbol YE (3) Drain Packaging s... See More ⇒
Detailed specifications: RZE002P02, RZF013P01, RZF020P01, RZF030P01, RZM002P02, RZQ050P01, RZR020P01, RZR025P01, P55NF06, ZDS020N60, ZDX130N50, KP214A9, KP501A, KP501B, KP501V, KP502A, KP504A
Keywords - RZR040P01 MOSFET specs
RZR040P01 cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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