All MOSFET. RZR040P01 Datasheet

 

RZR040P01 Datasheet and Replacement


   Type Designator: RZR040P01
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TSMT3
 

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RZR040P01 Datasheet (PDF)

 ..1. Size:217K  rohm
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RZR040P01

1.5V Drive Pch MOSFET RZR040P01 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT31.0MAX2.90.850.4 0.7 Features ( )31) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V) ( ) ( )1 20.95 0.950.161.9 Applications (1) Gate Each lead has same dimensionsSwitching (2) SourceAbbreviated symbol : YE(3) Drain Packaging s

Datasheet: RZE002P02 , RZF013P01 , RZF020P01 , RZF030P01 , RZM002P02 , RZQ050P01 , RZR020P01 , RZR025P01 , IRFB4115 , ZDS020N60 , ZDX130N50 , KP214A9 , KP501A , KP501B , KP501V , KP502A , KP504A .

History: 2SK3278I | DH300P06 | PK5G6EA | UF830L-TF1-T | HAT1016R | IXFN82N60P | HUFA75545P3

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