All MOSFET. ZDS020N60 Datasheet

 

ZDS020N60 Datasheet and Replacement


   Type Designator: ZDS020N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 0.63 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 145 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.4 Ohm
   Package: SOP8
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ZDS020N60 Datasheet (PDF)

 ..1. Size:1149K  rohm
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ZDS020N60

Data Sheet10V Drive Nch MOSFETZDS020N60 Structure Dimensions (Unit : mm)SOP8Silicon N-channel MOSFET(8) (5)Features1) Low on-resistance.2) High-speed switching.(1) (4)3) Wide SOA. ApplicationSwitching Packaging specifications Inner circuitPackage Taping (8) (7) (6) (5)TypeCode TBBasic ordering unit (pieces) 2500ZDS020N60 (1) Source

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: FCP170N60 | SSF11NS65UF | SFB053N100C3 | FQU13N10 | SWMI4N65D | NTMFS4837NHT1G | BMS3003

Keywords - ZDS020N60 MOSFET datasheet

 ZDS020N60 cross reference
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