All MOSFET. ZDS020N60 Datasheet

 

ZDS020N60 Datasheet and Replacement


   Type Designator: ZDS020N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 0.63 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 145 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.4 Ohm
   Package: SOP8
 

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ZDS020N60 Datasheet (PDF)

 ..1. Size:1149K  rohm
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ZDS020N60

Data Sheet10V Drive Nch MOSFETZDS020N60 Structure Dimensions (Unit : mm)SOP8Silicon N-channel MOSFET(8) (5)Features1) Low on-resistance.2) High-speed switching.(1) (4)3) Wide SOA. ApplicationSwitching Packaging specifications Inner circuitPackage Taping (8) (7) (6) (5)TypeCode TBBasic ordering unit (pieces) 2500ZDS020N60 (1) Source

Datasheet: RZF013P01 , RZF020P01 , RZF030P01 , RZM002P02 , RZQ050P01 , RZR020P01 , RZR025P01 , RZR040P01 , IRF630 , ZDX130N50 , KP214A9 , KP501A , KP501B , KP501V , KP502A , KP504A , KP504V .

History: TPC8027 | IRFP242

Keywords - ZDS020N60 MOSFET datasheet

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