ZDS020N60 Specs and Replacement
Type Designator: ZDS020N60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.63 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 145 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.4 Ohm
Package: SOP8
ZDS020N60 substitution
- MOSFET ⓘ Cross-Reference Search
ZDS020N60 datasheet
zds020n60.pdf
Data Sheet 10V Drive Nch MOSFET ZDS020N60 Structure Dimensions (Unit mm) SOP8 Silicon N-channel MOSFET (8) (5) Features 1) Low on-resistance. 2) High-speed switching. (1) (4) 3) Wide SOA. Application Switching Packaging specifications Inner circuit Package Taping (8) (7) (6) (5) Type Code TB Basic ordering unit (pieces) 2500 ZDS020N60 (1) Source ... See More ⇒
Detailed specifications: RZF013P01, RZF020P01, RZF030P01, RZM002P02, RZQ050P01, RZR020P01, RZR025P01, RZR040P01, 8205A, ZDX130N50, KP214A9, KP501A, KP501B, KP501V, KP502A, KP504A, KP504V
Keywords - ZDS020N60 MOSFET specs
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