All MOSFET. ZDS020N60 Datasheet

 

ZDS020N60 MOSFET. Datasheet pdf. Equivalent


   Type Designator: ZDS020N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 0.63 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 20 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 145 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.4 Ohm
   Package: SOP8

 ZDS020N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ZDS020N60 Datasheet (PDF)

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 zds020n60.pdf

ZDS020N60 ZDS020N60

Data Sheet10V Drive Nch MOSFETZDS020N60 Structure Dimensions (Unit : mm)SOP8Silicon N-channel MOSFET(8) (5)Features1) Low on-resistance.2) High-speed switching.(1) (4)3) Wide SOA. ApplicationSwitching Packaging specifications Inner circuitPackage Taping (8) (7) (6) (5)TypeCode TBBasic ordering unit (pieces) 2500ZDS020N60 (1) Source

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 2N6849

 

 
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