ZDX130N50 MOSFET. Datasheet pdf. Equivalent
Type Designator: ZDX130N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 13 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 11.5 nC
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 200 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO220FM
ZDX130N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ZDX130N50 Datasheet (PDF)
zdx130n50.pdf
Data Sheet10V Drive Nch MOSFETZDX130N50 Structure Dimensions (Unit : mm)TO-220FMTO-220FMSilicon N-channel MOSFET10.0 3.2 4.510.0 3.2 4.52.82.8Features1) Low on-resistance. 1.21.21.31.32) High-speed switching.3) Gate-source voltage 0.80.82.54 2.54 0.75 2.62.54 2.54 0.75 2.6VGSS guaranteed to be 30V .(1) (2) (3)(1) (2) (3)4) Hig
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: PSMN0R7-25YLD
History: PSMN0R7-25YLD
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