ZDX130N50 Specs and Replacement
Type Designator: ZDX130N50
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 200 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO220FM
ZDX130N50 substitution
- MOSFET ⓘ Cross-Reference Search
ZDX130N50 datasheet
zdx130n50.pdf
Data Sheet 10V Drive Nch MOSFET ZDX130N50 Structure Dimensions (Unit mm) TO-220FM TO-220FM Silicon N-channel MOSFET 10.0 3.2 4.5 10.0 3.2 4.5 2.8 2.8 Features 1) Low on-resistance. 1.2 1.2 1.3 1.3 2) High-speed switching. 3) Gate-source voltage 0.8 0.8 2.54 2.54 0.75 2.6 2.54 2.54 0.75 2.6 VGSS guaranteed to be 30V . (1) (2) (3) (1) (2) (3) 4) Hig... See More ⇒
Detailed specifications: RZF020P01, RZF030P01, RZM002P02, RZQ050P01, RZR020P01, RZR025P01, RZR040P01, ZDS020N60, 7N65, KP214A9, KP501A, KP501B, KP501V, KP502A, KP504A, KP504V, KP504G
Keywords - ZDX130N50 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: IMZA65R072M1H | TPC6201
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