SCG3019 Datasheet and Replacement
Type Designator: SCG3019
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 9 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 13 Ohm
Package: SOT523
SCG3019 substitution
SCG3019 Datasheet (PDF)
scg3019.pdf

SCG3019 N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-523FEATURES Low on-resistance. Fast switching speed. Low voltage drive makes this device ideal for portable equipment. Easily designed drive circuits. Easy to parallel. EQUIVALENT CIRCUIT Millimeter Millimeter
Datasheet: SMY60 , U105D , 2N7002KDW , S2N7002 , S2N7002DW , S2N7002K , S2N7002KW , S2N7002W , AON7403 , SDF920NE , SDN520C , SFN423P , SGM0410S , SGM2305A , SGM2306A , SGM2310A , SGM3055 .
History: WMK11N65SR
Keywords - SCG3019 MOSFET datasheet
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History: WMK11N65SR



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