SFN423P Datasheet and Replacement
Type Designator: SFN423P
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 6.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 98 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
Package: DFN2X28PP
SFN423P substitution
SFN423P Datasheet (PDF)
sfn423p.pdf

SFN423P -6.6 A , -20 V , RDS(ON) 42 m P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DFN2x2-8PP DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. T
Datasheet: S2N7002 , S2N7002DW , S2N7002K , S2N7002KW , S2N7002W , SCG3019 , SDF920NE , SDN520C , IRFZ48N , SGM0410S , SGM2305A , SGM2306A , SGM2310A , SGM3055 , SID05N10 , SID10N30-600I , SID20N06-90I .
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History: MTP4N90 | TK11A55D



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