All MOSFET. SFN423P Datasheet

 

SFN423P Datasheet and Replacement


   Type Designator: SFN423P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 6.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 98 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: DFN2X28PP
 

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SFN423P Datasheet (PDF)

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SFN423P

SFN423P -6.6 A , -20 V , RDS(ON) 42 m P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DFN2x2-8PP DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. T

Datasheet: S2N7002 , S2N7002DW , S2N7002K , S2N7002KW , S2N7002W , SCG3019 , SDF920NE , SDN520C , IRF9640 , SGM0410S , SGM2305A , SGM2306A , SGM2310A , SGM3055 , SID05N10 , SID10N30-600I , SID20N06-90I .

History: CJD04N60 | IRFR1N60APBF

Keywords - SFN423P MOSFET datasheet

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