All MOSFET. SGM0410S Datasheet

 

SGM0410S Datasheet and Replacement


   Type Designator: SGM0410S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21.6 nS
   Cossⓘ - Output Capacitance: 29 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm
   Package: SOT89
 

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SGM0410S Datasheet (PDF)

 ..1. Size:482K  secos
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SGM0410S

SGM0410S 2.2A , 100V , RDS(ON) 310 m N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOT-89 The SGM0410S provide the designer with the best Acombination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-89 pac

 7.1. Size:620K  secos
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SGM0410S

SGM0410 3.5A , 100V , RDS(ON) 170 m N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOT-89 The SGM0410 provide the designer with the best Acombination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-89 package 4Top Vie

Datasheet: S2N7002DW , S2N7002K , S2N7002KW , S2N7002W , SCG3019 , SDF920NE , SDN520C , SFN423P , 2SK3918 , SGM2305A , SGM2306A , SGM2310A , SGM3055 , SID05N10 , SID10N30-600I , SID20N06-90I , SID3055 .

History: MTDN8233CDV8 | CS3410B4 | IRFH5300TRPBF | NVMFD024N06CT1G | CSZ44V-1 | HYG015N04LS1C2 | SI4558DY

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