All MOSFET. SID05N10 Datasheet

 

SID05N10 Datasheet and Replacement


   Type Designator: SID05N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9.4 nS
   Cossⓘ - Output Capacitance: 38 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
   Package: TO251
 

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SID05N10 Datasheet (PDF)

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SID05N10

SID05N10 5A , 100V , RDS(ON) 170 m N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen-free TO-251 DESCRIPTION The SID05N10 provide the designer with the best combination of fast switching, The TO-251 package is universally preferred for all commercial-industrial surface mount app

Datasheet: SDF920NE , SDN520C , SFN423P , SGM0410S , SGM2305A , SGM2306A , SGM2310A , SGM3055 , AO4468 , SID10N30-600I , SID20N06-90I , SID3055 , SID40N03 , SID9435 , SID9575 , SID9971 , SJV01N60 .

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