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SID05N10 Specs and Replacement

Type Designator: SID05N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.4 nS

Cossⓘ - Output Capacitance: 38 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm

Package: TO251

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SID05N10 datasheet

 ..1. Size:2189K  secos
sid05n10.pdf pdf_icon

SID05N10

SID05N10 5A , 100V , RDS(ON) 170 m N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen-free TO-251 DESCRIPTION The SID05N10 provide the designer with the best combination of fast switching, The TO-251 package is universally preferred for all commercial-industrial surface mount app... See More ⇒

Detailed specifications: SDF920NE, SDN520C, SFN423P, SGM0410S, SGM2305A, SGM2306A, SGM2310A, SGM3055, 60N06, SID10N30-600I, SID20N06-90I, SID3055, SID40N03, SID9435, SID9575, SID9971, SJV01N60

Keywords - SID05N10 MOSFET specs

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