SID05N10 Specs and Replacement
Type Designator: SID05N10
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9.4 nS
Cossⓘ - Output Capacitance: 38 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
Package: TO251
SID05N10 substitution
- MOSFET ⓘ Cross-Reference Search
SID05N10 datasheet
sid05n10.pdf
SID05N10 5A , 100V , RDS(ON) 170 m N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen-free TO-251 DESCRIPTION The SID05N10 provide the designer with the best combination of fast switching, The TO-251 package is universally preferred for all commercial-industrial surface mount app... See More ⇒
Detailed specifications: SDF920NE, SDN520C, SFN423P, SGM0410S, SGM2305A, SGM2306A, SGM2310A, SGM3055, 60N06, SID10N30-600I, SID20N06-90I, SID3055, SID40N03, SID9435, SID9575, SID9971, SJV01N60
Keywords - SID05N10 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: 2SK2756-01R
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