All MOSFET. SID05N10 Datasheet

 

SID05N10 Datasheet and Replacement


   Type Designator: SID05N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 9.4 nS
   Cossⓘ - Output Capacitance: 38 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
   Package: TO251
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SID05N10 Datasheet (PDF)

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SID05N10

SID05N10 5A , 100V , RDS(ON) 170 m N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen-free TO-251 DESCRIPTION The SID05N10 provide the designer with the best combination of fast switching, The TO-251 package is universally preferred for all commercial-industrial surface mount app

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 2N6849L | IRFY044C | 2SK2973 | SI9926BDY | SIB411DK | 2N6800JANTXV | SI9434BDY

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