All MOSFET. SID10N30-600I Datasheet

 

SID10N30-600I Datasheet and Replacement


   Type Designator: SID10N30-600I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 60 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO251P
 

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SID10N30-600I Datasheet (PDF)

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SID10N30-600I

SID10N30-600I 7.5A, 300V, RDS(ON) 600 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION TO-251P The miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES L

Datasheet: SDN520C , SFN423P , SGM0410S , SGM2305A , SGM2306A , SGM2310A , SGM3055 , SID05N10 , 5N50 , SID20N06-90I , SID3055 , SID40N03 , SID9435 , SID9575 , SID9971 , SJV01N60 , SMG1330N .

History: DMG6402LDM | 2SK359

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