SID10N30-600I Specs and Replacement
Type Designator: SID10N30-600I
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7.5 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 60 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO251P
SID10N30-600I substitution
- MOSFET ⓘ Cross-Reference Search
SID10N30-600I datasheet
sid10n30-600i.pdf
SID10N30-600I 7.5A, 300V, RDS(ON) 600 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION TO-251P The miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES L... See More ⇒
Detailed specifications: SDN520C, SFN423P, SGM0410S, SGM2305A, SGM2306A, SGM2310A, SGM3055, SID05N10, IRFP064N, SID20N06-90I, SID3055, SID40N03, SID9435, SID9575, SID9971, SJV01N60, SMG1330N
Keywords - SID10N30-600I MOSFET specs
SID10N30-600I cross reference
SID10N30-600I equivalent finder
SID10N30-600I pdf lookup
SID10N30-600I substitution
SID10N30-600I replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: IPP070N08N3
🌐 : EN ES РУ
LIST
Last Update
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10
Popular searches
k117 transistor | 2sc2291 | bc139 | 2sc1398 | 2sd218 | bc547 характеристики | me15n10-g | 2n2905 equivalent