SID20N06-90I PDF and Equivalents Search

 

SID20N06-90I Specs and Replacement

Type Designator: SID20N06-90I

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 19 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.094 Ohm

Package: TO251P

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SID20N06-90I datasheet

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SID20N06-90I

SID20N06-90I 19A, 60V, RDS(ON) 94 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-251P DESCRIPTION The miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low RDS(on) pro... See More ⇒

Detailed specifications: SFN423P, SGM0410S, SGM2305A, SGM2306A, SGM2310A, SGM3055, SID05N10, SID10N30-600I, AO4468, SID3055, SID40N03, SID9435, SID9575, SID9971, SJV01N60, SMG1330N, SMG2301

Keywords - SID20N06-90I MOSFET specs

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