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SID3055 Specs and Replacement

Type Designator: SID3055

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19.8 nS

Cossⓘ - Output Capacitance: 144 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: TO251

SID3055 substitution

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SID3055 datasheet

 ..1. Size:1588K  secos
 sid3055.pdf pdf_icon

SID3055

SID3055 15A, 30V,RDS(ON)80m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product TO-251 2.3 0.1 6.6 0.2 5.3 0.2 0.5 0.05 Description 7.0 0.2 The TO-251 is universally preferred for all commercial-industrial 5.6 0.2 surface mount applications and suited for low voltage applications such as DC/DC converters. 1.2 0.3 0... See More ⇒

Detailed specifications: SGM0410S, SGM2305A, SGM2306A, SGM2310A, SGM3055, SID05N10, SID10N30-600I, SID20N06-90I, IRF730, SID40N03, SID9435, SID9575, SID9971, SJV01N60, SMG1330N, SMG2301, SMG2301P

Keywords - SID3055 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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