SID3055 Datasheet and Replacement
Type Designator: SID3055
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 19.8 nS
Cossⓘ - Output Capacitance: 144 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: TO251
SID3055 substitution
SID3055 Datasheet (PDF)
sid3055.pdf

SID305515A, 30V,RDS(ON)80m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductTO-2512.30.16.60.25.30.2 0.50.05Description7.00.2The TO-251 is universally preferred for all commercial-industrial5.60.2 surface mount applications and suited for low voltage applications such as DC/DC converters.1.20.30
Datasheet: SGM0410S , SGM2305A , SGM2306A , SGM2310A , SGM3055 , SID05N10 , SID10N30-600I , SID20N06-90I , IRFP064N , SID40N03 , SID9435 , SID9575 , SID9971 , SJV01N60 , SMG1330N , SMG2301 , SMG2301P .
History: DMG6402LDM | 2SK359
Keywords - SID3055 MOSFET datasheet
SID3055 cross reference
SID3055 equivalent finder
SID3055 lookup
SID3055 substitution
SID3055 replacement
History: DMG6402LDM | 2SK359



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