All MOSFET. SID3055 Datasheet

 

SID3055 Datasheet and Replacement


   Type Designator: SID3055
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 5.4 nC
   tr ⓘ - Rise Time: 19.8 nS
   Cossⓘ - Output Capacitance: 144 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO251
 

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SID3055 Datasheet (PDF)

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SID3055

SID305515A, 30V,RDS(ON)80m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductTO-2512.30.16.60.25.30.2 0.50.05Description7.00.2The TO-251 is universally preferred for all commercial-industrial5.60.2 surface mount applications and suited for low voltage applications such as DC/DC converters.1.20.30

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Keywords - SID3055 MOSFET datasheet

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