SID40N03 Specs and Replacement
Type Designator: SID40N03
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 36 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 380 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
Package: TO251
SID40N03 substitution
- MOSFET ⓘ Cross-Reference Search
SID40N03 datasheet
sid40n03.pdf
SID40N03 36A, 30V,RDS(ON)21m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product TO-251 Description 2.3 0.1 6.6 0.2 The SID40N03 provide the designer with the best combination 5.3 0.2 0.5 0.05 of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. 7.0 0.2 5.6 0.2 The TO-251 is universall... See More ⇒
Detailed specifications: SGM2305A, SGM2306A, SGM2310A, SGM3055, SID05N10, SID10N30-600I, SID20N06-90I, SID3055, IRFZ44N, SID9435, SID9575, SID9971, SJV01N60, SMG1330N, SMG2301, SMG2301P, SMG2302
Keywords - SID40N03 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: SWF2N70D | G50N03A | SMF7N65
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