SID40N03 Datasheet and Replacement
Type Designator: SID40N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id| ⓘ - Maximum Drain Current: 36 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 17 nC
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 380 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
Package: TO251
SID40N03 substitution
SID40N03 Datasheet (PDF)
sid40n03.pdf

SID40N0336A, 30V,RDS(ON)21m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductTO-251Description2.30.16.60.2The SID40N03 provide the designer with the best combination 5.30.2 0.50.05 of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. 7.00.25.60.2The TO-251 is universall
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