All MOSFET. SID40N03 Datasheet

 

SID40N03 Datasheet and Replacement


   Type Designator: SID40N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 36 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 17 nC
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 380 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
   Package: TO251
 

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SID40N03 Datasheet (PDF)

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SID40N03

SID40N0336A, 30V,RDS(ON)21m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductTO-251Description2.30.16.60.2The SID40N03 provide the designer with the best combination 5.30.2 0.50.05 of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. 7.00.25.60.2The TO-251 is universall

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Keywords - SID40N03 MOSFET datasheet

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