SJV01N60 MOSFET. Datasheet pdf. Equivalent
Type Designator: SJV01N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.625 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 1 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 21 nS
Drain-Source Capacitance (Cd): 28 pF
Maximum Drain-Source On-State Resistance (Rds): 0.01 Ohm
Package: TO92
SJV01N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SJV01N60 Datasheet (PDF)
1.1. sjv01n60.pdf 
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SJV01N60 1A , 600V , RDS(ON) 10 m? ? ? ? N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 DESCRIPTION The high voltage MOSFET uses an advanced A D termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, B this a
Datasheet: SID05N10 , SID10N30-600I , SID20N06-90I , SID3055 , SID40N03 , SID9435 , SID9575 , SID9971 , IRF840 , SMG1330N , SMG2301 , SMG2301P , SMG2302 , SMG2302N , SMG2305 , SMG2305P , SMG2305PE .
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