SJV01N60 Specs and Replacement
Type Designator: SJV01N60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.625 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 28 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO92
SJV01N60 substitution
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SJV01N60 datasheet
sjv01n60.pdf
SJV01N60 1A , 600V , RDS(ON) 10 m N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 DESCRIPTION The high voltage MOSFET uses an advanced A D termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition... See More ⇒
Detailed specifications: SID05N10, SID10N30-600I, SID20N06-90I, SID3055, SID40N03, SID9435, SID9575, SID9971, 20N60, SMG1330N, SMG2301, SMG2301P, SMG2302, SMG2302N, SMG2305, SMG2305P, SMG2305PE
Keywords - SJV01N60 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: RVQ040N05 | KIA10N80H-220F | 2SK3913-01MR
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