All MOSFET. SJV01N60 Datasheet

 

SJV01N60 Datasheet and Replacement


   Type Designator: SJV01N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.625 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 28 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO92
 

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SJV01N60 Datasheet (PDF)

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SJV01N60

SJV01N60 1A , 600V , RDS(ON) 10 m N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 DESCRIPTION The high voltage MOSFET uses an advanced ADtermination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition

Datasheet: SID05N10 , SID10N30-600I , SID20N06-90I , SID3055 , SID40N03 , SID9435 , SID9575 , SID9971 , 20N60 , SMG1330N , SMG2301 , SMG2301P , SMG2302 , SMG2302N , SMG2305 , SMG2305P , SMG2305PE .

History: HUFA75329P3 | SM4307PSK

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