All MOSFET. SMG1330N Datasheet

 

SMG1330N Datasheet and Replacement


   Type Designator: SMG1330N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
   Package: SC59
 

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SMG1330N Datasheet (PDF)

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SMG1330N

SMG1330N 2.0A , 30V , RDS(ON) 58 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs Autilize a high cell density trench process to provide low L3RDS(ON) and to ensure minimal power loss and heat dissipation. 3

Datasheet: SID10N30-600I , SID20N06-90I , SID3055 , SID40N03 , SID9435 , SID9575 , SID9971 , SJV01N60 , IRF540N , SMG2301 , SMG2301P , SMG2302 , SMG2302N , SMG2305 , SMG2305P , SMG2305PE , SMG2306A .

History: HMS8N60K | 2SK367

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