SMG1330N Specs and Replacement
Type Designator: SMG1330N
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 24 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
Package: SC59
SMG1330N substitution
- MOSFET ⓘ Cross-Reference Search
SMG1330N datasheet
smg1330n.pdf
SMG1330N 2.0A , 30V , RDS(ON) 58 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs A utilize a high cell density trench process to provide low L 3 RDS(ON) and to ensure minimal power loss and heat dissipation. 3... See More ⇒
Detailed specifications: SID10N30-600I, SID20N06-90I, SID3055, SID40N03, SID9435, SID9575, SID9971, SJV01N60, IRF540N, SMG2301, SMG2301P, SMG2302, SMG2302N, SMG2305, SMG2305P, SMG2305PE, SMG2306A
Keywords - SMG1330N MOSFET specs
SMG1330N cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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