SSD12P10 PDF and Equivalents Search

 

SSD12P10 Specs and Replacement

Type Designator: SSD12P10

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm

Package: TO252

SSD12P10 substitution

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SSD12P10 datasheet

 ..1. Size:401K  secos
 ssd12p10.pdf pdf_icon

SSD12P10

SSD12P10 2A , 650V , RDS(ON) 8 P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free TO-252(D-Pack) DESCRIPTION The SSD12P10 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred f... See More ⇒

 ..2. Size:911K  cn vbsemi
 ssd12p10.pdf pdf_icon

SSD12P10

SSD12P10 www.VBsemi.tw P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.250 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET - 100 11.7 0.280 at VGS = - 4.5 V - 8.0 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-251 Power Switch... See More ⇒

Detailed specifications: SMG5403, SMG5406, SMG5409, SMS318, SMS4003K, SMS840, SSD02N65, SSD10N20-400D, 5N60, SSD15N10, SSD20N06-90D, SSD20N10-250D, SSD20N15-250D, SSD20P06-135D, SSD2504, SSD2504S, SSD3055

Keywords - SSD12P10 MOSFET specs

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