All MOSFET. SSD12P10 Datasheet

 

SSD12P10 Datasheet and Replacement


   Type Designator: SSD12P10
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 35.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
   Package: TO252
 

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SSD12P10 Datasheet (PDF)

 ..1. Size:401K  secos
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SSD12P10

SSD12P10 2A , 650V , RDS(ON) 8 P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free TO-252(D-Pack) DESCRIPTION The SSD12P10 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred f

 ..2. Size:911K  cn vbsemi
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SSD12P10

SSD12P10www.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.250 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET- 100 11.70.280 at VGS = - 4.5 V - 8.0 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-251 Power Switch

Datasheet: SMG5403 , SMG5406 , SMG5409 , SMS318 , SMS4003K , SMS840 , SSD02N65 , SSD10N20-400D , 13N50 , SSD15N10 , SSD20N06-90D , SSD20N10-250D , SSD20N15-250D , SSD20P06-135D , SSD2504 , SSD2504S , SSD3055 .

History: SI5515CDC | SJMN850R80ZF

Keywords - SSD12P10 MOSFET datasheet

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