All MOSFET. F5027 Datasheet

 

F5027 Datasheet and Replacement


   Type Designator: F5027
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 85 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Id| ⓘ - Maximum Drain Current: 52 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TPACK
 

 F5027 substitution

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F5027 Datasheet (PDF)

 0.1. Size:63K  fairchild semi
 fjpf5027.pdf pdf_icon

F5027

FJPF5027High Voltage and High Reliability High Speed Switching Wide SOATO-220F11.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 3 A ICP Collector Cur

 0.2. Size:221K  onsemi
 fjpf5027.pdf pdf_icon

F5027

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: F5017H , F5018 , F5019 , F5020 , F5021H , F5022 , F5023 , F5026 , IRFB4110 , F5028 , F5029 , F5030 , F5031 , F5032 , F5033 , F5038H , FA38SA50LC .

History: FDC6301N

Keywords - F5027 MOSFET datasheet

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