F5027
MOSFET. Datasheet pdf. Equivalent
Type Designator: F5027
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 85
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Id|ⓘ - Maximum Drain Current: 52
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02
Ohm
Package: TPACK
F5027
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
F5027
Datasheet (PDF)
0.1. Size:63K fairchild semi
fjpf5027.pdf
FJPF5027High Voltage and High Reliability High Speed Switching Wide SOATO-220F11.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 3 A ICP Collector Cur
0.2. Size:221K onsemi
fjpf5027.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Datasheet: F5017H
, F5018
, F5019
, F5020
, F5021H
, F5022
, F5023
, F5026
, IRFB4227
, F5028
, F5029
, F5030
, F5031
, F5032
, F5033
, F5038H
, FA38SA50LC
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