SSD3055
MOSFET. Datasheet pdf. Equivalent
Type Designator: SSD3055
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 28
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 15
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 6.2
nC
trⓘ - Rise Time: 7.6
nS
Cossⓘ -
Output Capacitance: 81
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026
Ohm
Package:
TO252
SSD3055
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSD3055
Datasheet (PDF)
..1. Size:506K secos
ssd3055.pdf 
SSD3055 18A , 30V , RDS(ON) 22 N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free TO-252(D-Pack)DESCRIPTION The SSD3055 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter appl
9.1. Size:182K secos
ssd30n10-50d.pdf
SSD30N10-50D 26A, 100V, RDS(ON) 50m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free TO-252(D-Pack)DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low R
9.2. Size:387K secos
ssd30n06-39d.pdf
SSD30N06-39D N-Ch Enhancement Mode Power MOSFET 30A, 60V, RDS(ON) 38 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free TO-252(D-Pack)DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are
9.3. Size:454K secos
ssd30n03-40d.pdf
SSD30N03-40D N-Ch Enhancement Mode Power MOSFET 34A, 30V, RDS(ON) 26m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION TO-252(D-Pack) These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES
9.4. Size:393K secos
ssd30n10-70d.pdf
SSD30N10-70D N-Ch Enhancement Mode Power MOSFET 21A, 100V, RDS(ON) 78 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free TO-252(D-Pack)KEY FEATURES Low RDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications PoE Power Sourcing Equipment PoE Powered Devices ACB
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