SSD3055 MOSFET Datasheet: N-Ch, 30V, 15A. Full specification with pinout and replacement list

SSD3055 Specs and Replacement

Type Designator: SSD3055

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.6 nS

Cossⓘ - Output Capacitance: 81 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm

Package: TO252

SSD3055 substitution

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SSD3055 datasheet

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SSD3055 18A , 30V , RDS(ON) 22 N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free TO-252(D-Pack) DESCRIPTION The SSD3055 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter appl... See More ⇒

9.1. Size:182K secos
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SSD30N10-50D 26A, 100V, RDS(ON) 50m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free TO-252(D-Pack) DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low R... See More ⇒

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SSD30N06-39D N-Ch Enhancement Mode Power MOSFET 30A, 60V, RDS(ON) 38 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free TO-252(D-Pack) DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are ... See More ⇒

9.3. Size:454K secos
ssd30n03-40d.pdf pdf_icon

SSD30N03-40D N-Ch Enhancement Mode Power MOSFET 34A, 30V, RDS(ON) 26m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION TO-252(D-Pack) These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES ... See More ⇒