All MOSFET. SSE110N03-03P Datasheet

 

SSE110N03-03P MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSE110N03-03P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 110 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 27 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: TO220

 SSE110N03-03P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSE110N03-03P Datasheet (PDF)

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 sse110n03-03p.pdf

SSE110N03-03P SSE110N03-03P

SSE110N03-03P 110A , 30V , RDS(ON) 2.5m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free TO-220P DESCRIPTION These miniature surface mount MOSFETs utilize a DHigh Cell Density trench process to provide low RDS(on) Cand to ensure minimal power loss and heat dissipatio

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: MTN4410V8 | TSM4N80CI

 

 
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