SSE110N03-03P Datasheet and Replacement
Type Designator: SSE110N03-03P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 110 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 27 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
Package: TO220
SSE110N03-03P substitution
SSE110N03-03P Datasheet (PDF)
sse110n03-03p.pdf

SSE110N03-03P 110A , 30V , RDS(ON) 2.5m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free TO-220P DESCRIPTION These miniature surface mount MOSFETs utilize a DHigh Cell Density trench process to provide low RDS(on) Cand to ensure minimal power loss and heat dissipatio
Datasheet: SSD70N03-04D , SSD70N04-06D , SSD9435 , SSD9575 , SSD95N03 , SSD9971 , SSD9973 , SSDF9504 , BS170 , SSE70N10-44P , SSE90N04-03P , SSE90N06-10P , SSE90N06-30P , SSE90N08-08 , SSE90N10-14 , SSE90P06-08P , SSF1320N .
History: MTM45N05E | FDMS3600AS | IXFA12N50P | UTT4850L-S08-R | UTT30P06G-TN3-R | 2SK2606
Keywords - SSE110N03-03P MOSFET datasheet
SSE110N03-03P cross reference
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History: MTM45N05E | FDMS3600AS | IXFA12N50P | UTT4850L-S08-R | UTT30P06G-TN3-R | 2SK2606



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