All MOSFET. SSE110N03-03P Datasheet

 

SSE110N03-03P Datasheet and Replacement


   Type Designator: SSE110N03-03P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 27 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: TO220
 

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SSE110N03-03P Datasheet (PDF)

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SSE110N03-03P

SSE110N03-03P 110A , 30V , RDS(ON) 2.5m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free TO-220P DESCRIPTION These miniature surface mount MOSFETs utilize a DHigh Cell Density trench process to provide low RDS(on) Cand to ensure minimal power loss and heat dissipatio

Datasheet: SSD70N03-04D , SSD70N04-06D , SSD9435 , SSD9575 , SSD95N03 , SSD9971 , SSD9973 , SSDF9504 , AO3407 , SSE70N10-44P , SSE90N04-03P , SSE90N06-10P , SSE90N06-30P , SSE90N08-08 , SSE90N10-14 , SSE90P06-08P , SSF1320N .

History: BL4N80-P | IPG20N06S4-15

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