All MOSFET. SSG0410 Datasheet

 

SSG0410 Datasheet and Replacement


   Type Designator: SSG0410
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9.4 nS
   Cossⓘ - Output Capacitance: 38 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.158 Ohm
   Package: SOP8
 

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SSG0410 Datasheet (PDF)

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SSG0410

SSG0410 N-Ch Enhancement Mode Power MOSFET 3.8 A, 100 V, RDS(ON) 158 m Elektronische Bauelemente DESCRIPTION The SSG0410 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low volt

Datasheet: SSE90N10-14 , SSE90P06-08P , SSF1320N , SSF1321P , SSF1331P , SSF7400 , SSF7401 , SSF84W , IRFZ44 , SSG4224 , SSG4228 , SSG4362N , SSG4390N , SSG4392N , SSG4394N , SSG4402N , SSG4407P .

History: ISZ019N03L5S | IRLML9303

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