SSG0410 Specs and Replacement
Type Designator: SSG0410
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9.4 nS
Cossⓘ - Output Capacitance: 38 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.158 Ohm
Package: SOP8
SSG0410 substitution
- MOSFET ⓘ Cross-Reference Search
SSG0410 datasheet
ssg0410.pdf
SSG0410 N-Ch Enhancement Mode Power MOSFET 3.8 A, 100 V, RDS(ON) 158 m Elektronische Bauelemente DESCRIPTION The SSG0410 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low volt... See More ⇒
Detailed specifications: SSE90N10-14, SSE90P06-08P, SSF1320N, SSF1321P, SSF1331P, SSF7400, SSF7401, SSF84W, IRFZ44, SSG4224, SSG4228, SSG4362N, SSG4390N, SSG4392N, SSG4394N, SSG4402N, SSG4407P
Keywords - SSG0410 MOSFET specs
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