SSG4639STM Specs and Replacement

Type Designator: SSG4639STM

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 68 nS

Cossⓘ - Output Capacitance: 641 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: SOP8

SSG4639STM substitution

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SSG4639STM datasheet

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SSG4639STM

SSG4639STM P-Ch Enhancement Mode Power MOSFET -14 A, -30 V, RDS(ON) 8.5 m Elektronische Bauelemente FEATURES Super high dense cell design for low RDS(on). SOP-8 Rugged and reliable. Surface Mount Package. ESD Protected. B PRODUCT SUMMARY PRODUCT SUMMARY L D VDSS(V) RDS(on) m( ID(A) 8.5@VGS= -10V M -30 -14 13@VGS= -4.5V A C N K J MARKI... See More ⇒

Detailed specifications: SSG4505, SSG4510, SSG4512CE, SSG4520H, SSG4530C, SSG4536C, SSG4542C, SSG4543C, SKD502T, SSG4801, SSG4825P, SSG4825PE, SSG4835P, SSG4841P, SSG4842N, SSG4874N, SSG4890N

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs