All MOSFET. SSG4639STM Datasheet

 

SSG4639STM Datasheet and Replacement


   Type Designator: SSG4639STM
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 68 nS
   Cossⓘ - Output Capacitance: 641 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: SOP8
 

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SSG4639STM Datasheet (PDF)

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SSG4639STM

SSG4639STM P-Ch Enhancement Mode Power MOSFET -14 A, -30 V, RDS(ON) 8.5 m Elektronische Bauelemente FEATURES Super high dense cell design for low RDS(on). SOP-8 Rugged and reliable. Surface Mount Package. ESD Protected. BPRODUCT SUMMARY PRODUCT SUMMARY L DVDSS(V) RDS(on) m( ID(A)8.5@VGS= -10V M-30 -14 13@VGS= -4.5V A CNKJMARKI

Datasheet: SSG4505 , SSG4510 , SSG4512CE , SSG4520H , SSG4530C , SSG4536C , SSG4542C , SSG4543C , IRF9540N , SSG4801 , SSG4825P , SSG4825PE , SSG4835P , SSG4841P , SSG4842N , SSG4874N , SSG4890N .

History: WML14N60C4 | IRF7466 | WMM14N60C4 | IRFF9133 | WSE3088 | MTB03N03H8 | HFH7N60

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