SSG5509A Specs and Replacement

Type Designator: SSG5509A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.8 nS

Cossⓘ - Output Capacitance: 99 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: SOP8

SSG5509A substitution

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SSG5509A datasheet

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 ssg5509a.pdf pdf_icon

SSG5509A

SSG5509A N & P-Ch Enhancement Mode Power MOSFET N-Ch 6.1 A, 30 V, RDS(ON) 30 m Elektronische Bauelemente P-Ch -4.8 A, -30 V, RDS(ON) 55 m RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 DESCRIPTION The SSG5509A uses advanced trench technology to B provide excellent on-resistance extremely efficient and ... See More ⇒

 9.1. Size:60K  1
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SSG5509A

SSG55N60 series Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone (562) 404-7855 * Fax (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER S DATA SHEET 55 AMP /600 Volts TO-254 and TO-254Z 1.65 V saturation ultrafast IGBT TO-258 and TO-259 Features Lowest ON-resistance in the industry Hermetically Sealed, Isolated Pa... See More ⇒

Detailed specifications: SSG4934N, SSG4935P, SSG4940N, SSG4940NC, SSG4942N, SSG4953, SSG4953P, SSG4990N, 5N60, SSG6612N, SSG6680, SSG9435, SSG9435BDY, SSG9435P, SSG9475, SSG9575, SSK3018K

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.