SSG6680 Specs and Replacement

Type Designator: SSG6680

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 11.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.3 nS

Cossⓘ - Output Capacitance: 285 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: SOP8

SSG6680 substitution

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SSG6680 datasheet

 ..1. Size:415K  secos
 ssg6680.pdf pdf_icon

SSG6680

SSG6680 11.5A, 30V,RDS(ON) 11m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8 Description 0.19 0.25 0.40 0.90 o The SSG6680 provide the designer with the best combination of fast switching, 0.375 REF 6.20 ruggedized device design, low on-resistance and cost-effectiveness. 5.80 0.25 The SOP-8 is universally preferred for al... See More ⇒

 9.1. Size:567K  secos
 ssg6612n.pdf pdf_icon

SSG6680

SSG6612N 9.4 A, 30 V, RDS(ON) 22 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications ar... See More ⇒

Detailed specifications: SSG4940N, SSG4940NC, SSG4942N, SSG4953, SSG4953P, SSG4990N, SSG5509A, SSG6612N, SI2302, SSG9435, SSG9435BDY, SSG9435P, SSG9475, SSG9575, SSK3018K, SSM0410, SSM452

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