SSG9575 Datasheet and Replacement
Type Designator: SSG9575
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 165 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: SOP8
SSG9575 substitution
SSG9575 Datasheet (PDF)
ssg9575.pdf

SSG9575-4A, -60V,RDS(ON) 90m Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductSOP-8Description0.190.250.400.90oThe SSG9575 provide the designer with the best combination of fast switching, 0.375 REF6.20ruggedized device design, ultra low on-resistance and cost-effectiveness. 5.800.25The SOP-8 is universally preferred f
Datasheet: SSG4990N , SSG5509A , SSG6612N , SSG6680 , SSG9435 , SSG9435BDY , SSG9435P , SSG9475 , IRFB31N20D , SSK3018K , SSM0410 , SSM452 , SSM9971 , SSN3541 , SSP7150N , SSP7200N , SSP7300N .
History: IRL80HS120 | SWU6N80D | TPN6R303NC | SVTP209R7NP7 | STD17NF03L-1 | KU2307Q | WML10N65C4
Keywords - SSG9575 MOSFET datasheet
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History: IRL80HS120 | SWU6N80D | TPN6R303NC | SVTP209R7NP7 | STD17NF03L-1 | KU2307Q | WML10N65C4



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