All MOSFET. SSP7200N Datasheet

 

SSP7200N Datasheet and Replacement


   Type Designator: SSP7200N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: SOP8PP
 

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SSP7200N Datasheet (PDF)

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SSP7200N

SSP7200N 3 A, 200 V, RDS(ON) 400 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8PP These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low RDS(on) pr

Datasheet: SSG9475 , SSG9575 , SSK3018K , SSM0410 , SSM452 , SSM9971 , SSN3541 , SSP7150N , RU6888R , SSP7300N , SSP7411P , SSP7421P , SSP7430N , SSP7431P , SSP7432N , SSP7434N , SSP7436N .

History: SM1C02NSU

Keywords - SSP7200N MOSFET datasheet

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