SSP7200N Specs and Replacement

Type Designator: SSP7200N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: SOP8PP

SSP7200N substitution

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SSP7200N datasheet

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SSP7200N

SSP7200N 3 A, 200 V, RDS(ON) 400 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8PP These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low RDS(on) pr... See More ⇒

Detailed specifications: SSG9475, SSG9575, SSK3018K, SSM0410, SSM452, SSM9971, SSN3541, SSP7150N, AO3400A, SSP7300N, SSP7411P, SSP7421P, SSP7430N, SSP7431P, SSP7432N, SSP7434N, SSP7436N

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