All MOSFET. FDB4020P Datasheet

 

FDB4020P MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDB4020P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 37.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 9.5 nC
   trⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: TO263AB

 FDB4020P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDB4020P Datasheet (PDF)

 ..1. Size:78K  fairchild semi
 fdp4020p fdb4020p.pdf

FDB4020P FDB4020P

September 2000FDP4020P/FDB4020PP-Channel 2.5V Specified Enhancement Mode Field Effect TransistorGeneral DescriptionFeatures -16 A, -20 V. RDS(on) = 0.08 @ VGS = -4.5 VThis P-Channel low threshold MOSFET has beenRDS(on) = 0.11 @ VGS = -2.5 V.designed for use as a linear pass element for low voltageoutputs. In addition, the part may be used as a low voltage Criti

 9.1. Size:392K  fairchild semi
 fdp4030l fdb4030l.pdf

FDB4020P FDB4020P

March 1998 FDP4030L / FDB4030L N-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese N-Channel enhancement mode power field effect20 A, 30 V. RDS(ON) = 0.035 @ VGS=10 Vtransistors are produced using Fairchild's proprietary, RDS(ON) = 0.055 @ VGS=4.5V.high cell density, DMOS technology. This very highCritical DC electrical parame

Datasheet: F5032 , F5033 , F5038H , FA38SA50LC , FA57SA50LC , FB180SA10 , AO3423B , AS2306 , IRF1407 , FDB4030L , FDB5680 , FDB5690 , FDB6030BL , FDB6030L , FDB6035AL , FDB6035L , FDB603AL .

 

 
Back to Top