FDB4020P Specs and Replacement

Type Designator: FDB4020P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 270 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: TO263AB

FDB4020P substitution

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FDB4020P datasheet

 ..1. Size:78K  fairchild semi
 fdp4020p fdb4020p.pdf pdf_icon

FDB4020P

September 2000 FDP4020P/FDB4020P P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features -16 A, -20 V. RDS(on) = 0.08 @ VGS = -4.5 V This P-Channel low threshold MOSFET has been RDS(on) = 0.11 @ VGS = -2.5 V. designed for use as a linear pass element for low voltage outputs. In addition, the part may be used as a low voltage Criti... See More ⇒

 9.1. Size:392K  fairchild semi
 fdp4030l fdb4030l.pdf pdf_icon

FDB4020P

March 1998 FDP4030L / FDB4030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 20 A, 30 V. RDS(ON) = 0.035 @ VGS=10 V transistors are produced using Fairchild's proprietary, RDS(ON) = 0.055 @ VGS=4.5V. high cell density, DMOS technology. This very high Critical DC electrical parame... See More ⇒

Detailed specifications: F5032, F5033, F5038H, FA38SA50LC, FA57SA50LC, FB180SA10, AO3423B, AS2306, 2SK3878, FDB4030L, FDB5680, FDB5690, FDB6030BL, FDB6030L, FDB6035AL, FDB6035L, FDB603AL

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