SSQ5N50 Specs and Replacement
Type Designator: SSQ5N50
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 74 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7.4 nS
Cossⓘ - Output Capacitance: 112 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO220
SSQ5N50 substitution
- MOSFET ⓘ Cross-Reference Search
SSQ5N50 datasheet
ssq5n50.pdf
SSQ5N50 4.5A, 500V, RDS(ON) 1500m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free TO-220P D FEATURES C Low RDS(on) Technology. B Low thermal impedance. R T Fast switching speed. A E S G APPLICATIONS F I Electronic ballast. H Electronic transformer J K ... See More ⇒
Detailed specifications: SSP7480N , SSP7481P , SSPS7321P , SSPS7330N , SSPS7331P , SSPS7332N , SSPS7333P , SSPS7334N , IRF740 , SSQ6N60 , SSRF30N20-400 , SSRF4N60 , SSRF50P04-16 , SSRF60N10 , SSRF90N06 , SSRF90N06-10 , SST2604 .
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