All MOSFET. SSQ5N50 Datasheet

 

SSQ5N50 Datasheet and Replacement


   Type Designator: SSQ5N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 26 nC
   tr ⓘ - Rise Time: 7.4 nS
   Cossⓘ - Output Capacitance: 112 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO220
 

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SSQ5N50 Datasheet (PDF)

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SSQ5N50

SSQ5N50 4.5A, 500V, RDS(ON) 1500m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free TO-220P DFEATURES C Low RDS(on) Technology. B Low thermal impedance. RT Fast switching speed. AESGAPPLICATIONS F I Electronic ballast. H Electronic transformer JK

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