SSQ6N60 Datasheet. Specs and Replacement
Type Designator: SSQ6N60 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.6 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6.8 nS
Cossⓘ - Output Capacitance: 84 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO220
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SSQ6N60 substitution
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SSQ6N60 datasheet
ssq6n60.pdf
SSQ6N60 2.6A, 600V, RDS(ON) 1500m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free TO-220P D FEATURES C Low RDS(on) Technology. B R Low thermal impedance. T Fast switching speed. A E S G APPLICATIONS F I Electronic ballast. H J Electronic transformer K ... See More ⇒
Detailed specifications: SSP7481P, SSPS7321P, SSPS7330N, SSPS7331P, SSPS7332N, SSPS7333P, SSPS7334N, SSQ5N50, IRF840, SSRF30N20-400, SSRF4N60, SSRF50P04-16, SSRF60N10, SSRF90N06, SSRF90N06-10, SST2604, SST2605
Keywords - SSQ6N60 MOSFET specs
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