All MOSFET. SSQ6N60 Datasheet

 

SSQ6N60 Datasheet and Replacement


   Type Designator: SSQ6N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 2.6 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 16 nC
   tr ⓘ - Rise Time: 6.8 nS
   Cossⓘ - Output Capacitance: 84 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO220
 

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SSQ6N60 Datasheet (PDF)

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SSQ6N60

SSQ6N60 2.6A, 600V, RDS(ON) 1500m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free TO-220P DFEATURES C Low RDS(on) Technology. BR Low thermal impedance. T Fast switching speed. AESGAPPLICATIONS F I Electronic ballast. HJ Electronic transformer K

Datasheet: SSP7481P , SSPS7321P , SSPS7330N , SSPS7331P , SSPS7332N , SSPS7333P , SSPS7334N , SSQ5N50 , IRF840 , SSRF30N20-400 , SSRF4N60 , SSRF50P04-16 , SSRF60N10 , SSRF90N06 , SSRF90N06-10 , SST2604 , SST2605 .

Keywords - SSQ6N60 MOSFET datasheet

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