All MOSFET. SSRF30N20-400 Datasheet

 

 

SSRF30N20-400 Datasheet and Replacement


   Type Designator: SSRF30N20-400
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 23 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 59 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: ITO220
 

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SSRF30N20-400 Datasheet (PDF)

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SSRF30N20-400

SSRF30N20-400 23A, 200V, RDS(ON) 400m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench ITO-220process to provide Low RDS(on) and to ensure minimal power loss and heat B Ndissipation. Typical applications are DC-

Datasheet: SSPS7321P , SSPS7330N , SSPS7331P , SSPS7332N , SSPS7333P , SSPS7334N , SSQ5N50 , SSQ6N60 , 20N60 , SSRF4N60 , SSRF50P04-16 , SSRF60N10 , SSRF90N06 , SSRF90N06-10 , SST2604 , SST2605 , SSPS922NE .

History: DMN62D0LFB

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