SSRF30N20-400 Datasheet. Specs and Replacement
Type Designator: SSRF30N20-400 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 23 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 59 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: ITO220
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SSRF30N20-400 substitution
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SSRF30N20-400 datasheet
ssrf30n20-400.pdf
SSRF30N20-400 23A, 200V, RDS(ON) 400m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench ITO-220 process to provide Low RDS(on) and to ensure minimal power loss and heat B N dissipation. Typical applications are DC-... See More ⇒
Detailed specifications: SSPS7321P, SSPS7330N, SSPS7331P, SSPS7332N, SSPS7333P, SSPS7334N, SSQ5N50, SSQ6N60, 20N60, SSRF4N60, SSRF50P04-16, SSRF60N10, SSRF90N06, SSRF90N06-10, SST2604, SST2605, SSPS922NE
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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