SSRF60N10 Datasheet. Specs and Replacement

Type Designator: SSRF60N10  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 51 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 59 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.078 Ohm

Package: ITO220

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SSRF60N10 datasheet

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SSRF60N10

SSRF60N10 N-Ch Enhancement Mode Power MOSFET 51A, 100V, RDS(ON) 78m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench ITO-220 process to provide Low RDS(on) and to ensure minimal power loss and heat B N dissipation. Typical applications are DC-DC co... See More ⇒

Detailed specifications: SSPS7332N, SSPS7333P, SSPS7334N, SSQ5N50, SSQ6N60, SSRF30N20-400, SSRF4N60, SSRF50P04-16, 50N06, SSRF90N06, SSRF90N06-10, SST2604, SST2605, SSPS922NE, SSPS924NE, SSU50N10, STT2604

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