SST2604 Datasheet. Specs and Replacement

Type Designator: SST2604  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: SOT26

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SST2604 datasheet

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SST2604

SST2604 5.5A, 30V,RDS(ON) 45m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOT-26 Description 1.90REF 0.95REF 0.95REF 1.2 REF The SST2604 utiltzed advance processing techniques to achieve the lowest 0.45 REF 0.60 REF possible on-resistance, extermely efficient and cost-effectiveness device. 2.60 3.00 The SST2604 is universally use... See More ⇒

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SST2604

SST2605 -4.0A, -30V,RDS(ON) 80m Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET o Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Typ. Symbol Min. Max. Unit Test Condition _ _ V VGS=0V, ID=-250uA Drain-Source Breakdown Voltage BVDSS -30 o o _ _ Breakdown Voltage Temp. Coefficient V/ Reference to 25 C,ID=-1mA C BVDS/ Tj -0.02 ... See More ⇒

Detailed specifications: SSQ5N50, SSQ6N60, SSRF30N20-400, SSRF4N60, SSRF50P04-16, SSRF60N10, SSRF90N06, SSRF90N06-10, IRF640, SST2605, SSPS922NE, SSPS924NE, SSU50N10, STT2604, STT2605, STT3402N, STT3405P

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