SSU50N10 Datasheet. Specs and Replacement

Type Designator: SSU50N10  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 54 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17.2 nS

Cossⓘ - Output Capacitance: 268 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: TO263

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SSU50N10 datasheet

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SSU50N10

SSU50N10 54A , 100V , RDS(ON) 22m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION TO-263 The SSU50N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applica... See More ⇒

Detailed specifications: SSRF50P04-16, SSRF60N10, SSRF90N06, SSRF90N06-10, SST2604, SST2605, SSPS922NE, SSPS924NE, IRF640N, STT2604, STT2605, STT3402N, STT3405P, STT3423P, STT3434N, STT3457P, STT3458N

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