All MOSFET. SSU50N10 Datasheet

 

SSU50N10 Datasheet and Replacement


   Type Designator: SSU50N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 54 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17.2 nS
   Cossⓘ - Output Capacitance: 268 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO263
 

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SSU50N10 Datasheet (PDF)

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SSU50N10

SSU50N10 54A , 100V , RDS(ON) 22m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION TO-263 The SSU50N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applica

Datasheet: SSRF50P04-16 , SSRF60N10 , SSRF90N06 , SSRF90N06-10 , SST2604 , SST2605 , SSPS922NE , SSPS924NE , IRF630 , STT2604 , STT2605 , STT3402N , STT3405P , STT3423P , STT3434N , STT3457P , STT3458N .

History: CS10N80F | STFI7N80K5

Keywords - SSU50N10 MOSFET datasheet

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