SSU50N10 Datasheet and Replacement
Type Designator: SSU50N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 54 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 17.2 nS
Cossⓘ - Output Capacitance: 268 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: TO263
SSU50N10 substitution
SSU50N10 Datasheet (PDF)
ssu50n10.pdf

SSU50N10 54A , 100V , RDS(ON) 22m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION TO-263 The SSU50N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applica
Datasheet: SSRF50P04-16 , SSRF60N10 , SSRF90N06 , SSRF90N06-10 , SST2604 , SST2605 , SSPS922NE , SSPS924NE , IRF630 , STT2604 , STT2605 , STT3402N , STT3405P , STT3423P , STT3434N , STT3457P , STT3458N .
History: IRLI3803PBF | KI138K | IRFB7734PBF
Keywords - SSU50N10 MOSFET datasheet
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History: IRLI3803PBF | KI138K | IRFB7734PBF



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