All MOSFET. STT3810N Datasheet

 

STT3810N MOSFET. Datasheet pdf. Equivalent


   Type Designator: STT3810N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12.5 nC
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0245 Ohm
   Package: TSOP6

 STT3810N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STT3810N Datasheet (PDF)

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 stt3810n.pdf

STT3810N STT3810N

STT3810N 6A , 20V , RDS(ON) 24.5 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free Key Features: TSOP-6 Low rDS(on) trench technology A Low thermal impedance EL Fast switching speed 6 5 4Typical Applications: B Battery Powered Instruments Portable Compu

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