STT3810N PDF and Equivalents Search

 

STT3810N Specs and Replacement

Type Designator: STT3810N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 125 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0245 Ohm

Package: TSOP6

STT3810N substitution

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STT3810N datasheet

 ..1. Size:448K  secos
 stt3810n.pdf pdf_icon

STT3810N

STT3810N 6A , 20V , RDS(ON) 24.5 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free Key Features TSOP-6 Low rDS(on) trench technology A Low thermal impedance E L Fast switching speed 6 5 4 Typical Applications B Battery Powered Instruments Portable Compu... See More ⇒

Detailed specifications: STT3458N, STT3463P, STT3470N, STT3471P, STT3490N, STT3520C, STT3585, STT3599C, 2SK3878, STT3922N, STT3962N, STT3962NE, STT3981, STT3998N, STT4443, STT6405, STT6602

Keywords - STT3810N MOSFET specs

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