All MOSFET. STT3810N Datasheet

 

STT3810N Datasheet and Replacement


   Type Designator: STT3810N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0245 Ohm
   Package: TSOP6
 

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STT3810N Datasheet (PDF)

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STT3810N

STT3810N 6A , 20V , RDS(ON) 24.5 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free Key Features: TSOP-6 Low rDS(on) trench technology A Low thermal impedance EL Fast switching speed 6 5 4Typical Applications: B Battery Powered Instruments Portable Compu

Datasheet: STT3458N , STT3463P , STT3470N , STT3471P , STT3490N , STT3520C , STT3585 , STT3599C , IRFP260 , STT3922N , STT3962N , STT3962NE , STT3981 , STT3998N , STT4443 , STT6405 , STT6602 .

History: RJK0210DPA | APM4927K | IPI60R190C6 | TPC8104 | VN67AK | BUZ231 | G08N03D2

Keywords - STT3810N MOSFET datasheet

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