STT4443 Specs and Replacement
Type Designator: STT4443
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.14 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 55 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: TSOP6
STT4443 substitution
- MOSFET ⓘ Cross-Reference Search
STT4443 datasheet
stt4443.pdf
STT4443 -2.3A , -30V , RDS(ON) 120 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 STT4443 utilized advanced processing techniques to A achieve the lowest possible on-resistance, extremely E L efficient and cost-effectiveness device. The TSOP-6 6 5 4 packag... See More ⇒
Detailed specifications: STT3585, STT3599C, STT3810N, STT3922N, STT3962N, STT3962NE, STT3981, STT3998N, AO3401, STT6405, STT6602, STT6802, SUM6K1N, SGM0410, SSD04N65, SSD20N10-130D, SSM9575
Keywords - STT4443 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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