All MOSFET. STT4443 Datasheet

 

STT4443 Datasheet and Replacement


   Type Designator: STT4443
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.14 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: TSOP6
 

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STT4443 Datasheet (PDF)

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STT4443

STT4443 -2.3A , -30V , RDS(ON) 120 mP-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 STT4443 utilized advanced processing techniques to Aachieve the lowest possible on-resistance, extremely ELefficient and cost-effectiveness device. The TSOP-6 6 5 4packag

Datasheet: STT3585 , STT3599C , STT3810N , STT3922N , STT3962N , STT3962NE , STT3981 , STT3998N , AO3401 , STT6405 , STT6602 , STT6802 , SUM6K1N , SGM0410 , SSD04N65 , SSD20N10-130D , SSM9575 .

History: HY4008A

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