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STT4443 Specs and Replacement

Type Designator: STT4443

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.14 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm

Package: TSOP6

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STT4443 datasheet

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stt4443.pdf pdf_icon

STT4443

STT4443 -2.3A , -30V , RDS(ON) 120 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 STT4443 utilized advanced processing techniques to A achieve the lowest possible on-resistance, extremely E L efficient and cost-effectiveness device. The TSOP-6 6 5 4 packag... See More ⇒

Detailed specifications: STT3585, STT3599C, STT3810N, STT3922N, STT3962N, STT3962NE, STT3981, STT3998N, AO3401, STT6405, STT6602, STT6802, SUM6K1N, SGM0410, SSD04N65, SSD20N10-130D, SSM9575

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