STT6405 Specs and Replacement
Type Designator: STT6405
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 120 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: TSOP6
STT6405 substitution
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STT6405 datasheet
stt6405.pdf
STT6405 -5.0 A, -30 V, RDS(ON) 50 m P-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product TSOP-6 A suffix of -C specifies halogen and lead-free DESCRIPTION The STT6405 uses advanced trench technology A E to provide excellent on-resistance with low gate change. L The device is suitable for use as a load switch or in PWM... See More ⇒
Detailed specifications: STT3599C, STT3810N, STT3922N, STT3962N, STT3962NE, STT3981, STT3998N, STT4443, K3569, STT6602, STT6802, SUM6K1N, SGM0410, SSD04N65, SSD20N10-130D, SSM9575, SST3585
Keywords - STT6405 MOSFET specs
STT6405 cross reference
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