All MOSFET. STT6405 Datasheet

 

STT6405 Datasheet and Replacement


   Type Designator: STT6405
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: TSOP6
 

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STT6405 Datasheet (PDF)

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STT6405

STT6405 -5.0 A, -30 V, RDS(ON) 50 m P-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product TSOP-6 A suffix of -C specifies halogen and lead-free DESCRIPTION The STT6405 uses advanced trench technology AEto provide excellent on-resistance with low gate change. LThe device is suitable for use as a load switch or in PWM

Datasheet: STT3599C , STT3810N , STT3922N , STT3962N , STT3962NE , STT3981 , STT3998N , STT4443 , SPP20N60C3 , STT6602 , STT6802 , SUM6K1N , SGM0410 , SSD04N65 , SSD20N10-130D , SSM9575 , SST3585 .

History: SSZ120R040C | WMK18N50C4 | WMLL013N08HGS | IRFL4315PBF | TK100A06N1 | FS18SM-14A | R6035ENZ

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