All MOSFET. STT6602 Datasheet

 

STT6602 Datasheet and Replacement


   Type Designator: STT6602
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 1.14 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 3.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 2.5(6) nS
   Cossⓘ - Output Capacitance: 40(55) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: TSOP6
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STT6602 Datasheet (PDF)

 ..1. Size:2997K  secos
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STT6602

STT6602 N-Ch: 3.3A, 30V, RDS(ON) 65 m P-Ch: -2.3A, -30V, RDS(ON) 120 m Elektronische Bauelemente N & P-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of -C specifies halogen and lead-free TSOP-6 DESCRIPTION The STT6602 uses advanced trench technology to AEprovide excellent on-resistance and low gate charge. L

 8.1. Size:185K  samhop
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STT6602

GreenProductSTT6603aS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.180 @ VGS=-10VSOT-223 package.-60V -2.5A240 @ VGS=-4.5VDGGSSOT - 223S(TA=25C unless otherwise noted)ABSOLUTE MAXIMUM RATINGSS

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History: IPP60R090CFD7 | IRLR024 | AON6794 | MC08N005C | ZXMN10A08E6TA | CED05N8 | BL10N70-A

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