STT6602 MOSFET Datasheet: NP-Ch, 30V, 3.3A. Full specification with pinout and replacement list

STT6602 Specs and Replacement

Type Designator: STT6602

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.14 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.5(6) nS

Cossⓘ - Output Capacitance: 40(55) pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: TSOP6

STT6602 substitution

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STT6602 datasheet

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STT6602 N-Ch 3.3A, 30V, RDS(ON) 65 m P-Ch -2.3A, -30V, RDS(ON) 120 m Elektronische Bauelemente N & P-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of -C specifies halogen and lead-free TSOP-6 DESCRIPTION The STT6602 uses advanced trench technology to A E provide excellent on-resistance and low gate charge. L... See More ⇒

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Green Product STT6603 a S mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 180 @ VGS=-10V SOT-223 package. -60V -2.5A 240 @ VGS=-4.5V D G G S SOT - 223 S (TA=25 C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS S... See More ⇒

Detailed specifications: STT3810N, STT3922N, STT3962N, STT3962NE, STT3981, STT3998N, STT4443, STT6405, IRFP260, STT6802, SUM6K1N, SGM0410, SSD04N65, SSD20N10-130D, SSM9575, SST3585, 2N4003K