All MOSFET. SSD04N65 Datasheet


SSD04N65 MOSFET. Datasheet pdf. Equivalent

Type Designator: SSD04N65

Marking Code: 4N65

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 56 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 18.8 nS

Drain-Source Capacitance (Cd): 56 pF

Maximum Drain-Source On-State Resistance (Rds): 2.6 Ohm

Package: TO252

SSD04N65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


SSD04N65 Datasheet (PDF)

0.1. ssd04n65.pdf Size:533K _secos


SSD04N65 4A , 650V , RDS(ON) 2.6Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION The SSD04N65 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter a

Datasheet: STT3981 , STT3998N , STT4443 , STT6405 , STT6602 , STT6802 , SUM6K1N , SGM0410 , 2SK2996 , SSD20N10-130D , SSM9575 , SST3585 , 2N4003K , 2N60D , 2N60F , 2N60I , 2N60P .


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