SSD04N65 Datasheet. Specs and Replacement

Type Designator: SSD04N65  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18.8 nS

Cossⓘ - Output Capacitance: 56 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm

Package: TO252

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SSD04N65 datasheet

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SSD04N65

SSD04N65 4A , 650V , RDS(ON) 2.6 N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free TO-252(D-Pack) DESCRIPTION The SSD04N65 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter a... See More ⇒

Detailed specifications: STT3981, STT3998N, STT4443, STT6405, STT6602, STT6802, SUM6K1N, SGM0410, P55NF06, SSD20N10-130D, SSM9575, SST3585, 2N4003K, 2N60D, 2N60F, 2N60I, 2N60P

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