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SSD04N65 Spec and Replacement


   Type Designator: SSD04N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18.8 nS
   Cossⓘ - Output Capacitance: 56 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm
   Package: TO252

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SSD04N65 Specs

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SSD04N65

SSD04N65 4A , 650V , RDS(ON) 2.6 N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free TO-252(D-Pack) DESCRIPTION The SSD04N65 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter a... See More ⇒

Detailed specifications: STT3981 , STT3998N , STT4443 , STT6405 , STT6602 , STT6802 , SUM6K1N , SGM0410 , K4145 , SSD20N10-130D , SSM9575 , SST3585 , 2N4003K , 2N60D , 2N60F , 2N60I , 2N60P .

History: IPP60R190P6 | AP02N90JB

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