SSD04N65 Datasheet and Replacement
Type Designator: SSD04N65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18.8 nS
Cossⓘ - Output Capacitance: 56 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm
Package: TO252
SSD04N65 substitution
SSD04N65 Datasheet (PDF)
ssd04n65.pdf

SSD04N65 4A , 650V , RDS(ON) 2.6 N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free TO-252(D-Pack)DESCRIPTION The SSD04N65 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter a
Datasheet: STT3981 , STT3998N , STT4443 , STT6405 , STT6602 , STT6802 , SUM6K1N , SGM0410 , IRFB3607 , SSD20N10-130D , SSM9575 , SST3585 , 2N4003K , 2N60D , 2N60F , 2N60I , 2N60P .
History: RUH85120S
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History: RUH85120S



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