WTD40N03 Specs and Replacement
Type Designator: WTD40N03
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 36 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 380 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
Package: TO252
WTD40N03 substitution
- MOSFET ⓘ Cross-Reference Search
WTD40N03 datasheet
wtd40n03.pdf
WTD40N03 Surface Mount P-Channel Enhancement DRAIN CURRENT Mode POWER MOSFET 3 DRAIN -15 AMPERES P b Lead(Pb)-Free DRAIN SOURCE VOLTAGE -60 VOLTAGE 1 GATE Features 2 *Super High Dense Cell Design For Low RDS(ON) SOURCE RDS(ON)... See More ⇒
Detailed specifications: WTC2301, WTC2302, WTC2305, WTC2305DS, WTC2306, WTC2312, WTC4501, WTC9435, STF13NM60N, WTD9435, WTD9575, WTD9973, WTG3043, WTK4224, WTK4228, WTK4424, WTK4435
Keywords - WTD40N03 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: STI100N10F7
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