WTD9435 MOSFET. Datasheet pdf. Equivalent
Type Designator: WTD9435
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 3 nC
trⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 187 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: TO252
WTD9435 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WTD9435 Datasheet (PDF)
wtd9435.pdf
WTD9435Surface Mount P-Channel EnhancementDRAIN CURRENTMode POWER MOSFET3 DRAIN-20 AMPERESP b Lead(Pb)-FreeDRAIN SOURCE VOLTAGE-30 VOLTAGE1 GATEFeatures:2*Super High Dense Cell Design For Low RDS(ON)SOURCERDS(ON)
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IXFR26N60Q
History: IXFR26N60Q
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918