WTD9575 Specs and Replacement
Type Designator: WTD9575
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 160 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: TO252
WTD9575 substitution
- MOSFET ⓘ Cross-Reference Search
WTD9575 datasheet
wtd9575.pdf
WTD9575 Surface Mount P-Channel Enhancement DRAIN CURRENT Mode POWER MOSFET 3 DRAIN -15 AMPERES P b Lead(Pb)-Free DRAIN SOURCE VOLTAGE -60 VOLTAGE 1 GATE Features 2 *Super High Dense Cell Design For Low RDS(ON) 4 SOURCE RDS(ON)... See More ⇒
Detailed specifications: WTC2305, WTC2305DS, WTC2306, WTC2312, WTC4501, WTC9435, WTD40N03, WTD9435, 2N60, WTD9973, WTG3043, WTK4224, WTK4228, WTK4424, WTK4435, WTK4501, WTK6679
Keywords - WTD9575 MOSFET specs
WTD9575 cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: TMP4N65 | RCJ100N25
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