WTD9575 Datasheet and Replacement
Type Designator: WTD9575
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 160 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: TO252
WTD9575 substitution
WTD9575 Datasheet (PDF)
wtd9575.pdf
WTD9575Surface Mount P-Channel EnhancementDRAIN CURRENTMode POWER MOSFET3 DRAIN-15 AMPERESP b Lead(Pb)-FreeDRAIN SOURCE VOLTAGE-60 VOLTAGE1 GATEFeatures:2*Super High Dense Cell Design For Low RDS(ON)4SOURCE RDS(ON)
Datasheet: WTC2305 , WTC2305DS , WTC2306 , WTC2312 , WTC4501 , WTC9435 , WTD40N03 , WTD9435 , 2N60 , WTD9973 , WTG3043 , WTK4224 , WTK4228 , WTK4424 , WTK4435 , WTK4501 , WTK6679 .
Keywords - WTD9575 MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: HY4008A | AP1801GU
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