WTN9575 Datasheet. Specs and Replacement

Type Designator: WTN9575  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 165 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: SOT223

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WTN9575 datasheet

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WTN9575

WTN9575 Surface Mount P-Channel DRAIN CURRENT Enhancement Mode Power MOSFET -4.0 AMPERES 2,4 DRAIN DRAIN SOURCE VOLTAGE P b Lead(Pb)-Free -60 VOLTAGE 1 GATE 4 1. GATE 2. DRAIN Features 1 3. SOURCE 3 2 SOURCE 4. DRAIN 3 * Super high dense cell design for low RDS(ON) RDS(ON) ... See More ⇒

Detailed specifications: WTK9410, WTK9431, WTK9435, WTK9971, WTL2602, WTL2622, WTM2310A, WTN9435, 3401, WTN9973, WTU1333, WTX1012, WTX7002, CEA6200, CEA6426, CEB01N65, CEB01N6G

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.