WTN9575 Specs and Replacement
Type Designator: WTN9575
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 165 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: SOT223
WTN9575 substitution
WTN9575 Specs
wtn9575.pdf
WTN9575 Surface Mount P-Channel DRAIN CURRENT Enhancement Mode Power MOSFET -4.0 AMPERES 2,4 DRAIN DRAIN SOURCE VOLTAGE P b Lead(Pb)-Free -60 VOLTAGE 1 GATE 4 1. GATE 2. DRAIN Features 1 3. SOURCE 3 2 SOURCE 4. DRAIN 3 * Super high dense cell design for low RDS(ON) RDS(ON) ... See More ⇒
Detailed specifications: WTK9410 , WTK9431 , WTK9435 , WTK9971 , WTL2602 , WTL2622 , WTM2310A , WTN9435 , RU7088R , WTN9973 , WTU1333 , WTX1012 , WTX7002 , CEA6200 , CEA6426 , CEB01N65 , CEB01N6G .
Keywords - WTN9575 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
